Formation of (Nd,Y)-silicides by sequential channeled implantation of Y and Nd ions

A buried hexagonal Nd0.32Y0.68Si1.7 layer is formed by a sequential implant ation of Y and Nd ions into (111)-oriented silicon wafers, The orientation relationship between the epitaxial Nd0.32Y0.68Si1.7 and the silicon is (000 1)Nd0.32Y0.68Si1.7//(111)(Si) with (11 (2) over bar 0)Nd0.32Y0.68Si1.7//(1 (1) over bar 0)(Si). High temperature annealing (1000 degrees C) results in a gradual transition into an orthorhombic ternary (Nd,Y)-silicide. Between the orthorhombic (Nd,Y)-silicide and the Si a preferential orientation rel ationship exists: (110)(orth)//(1 (1) over bar 0)(Si) with (001)(orth)//(11 1)(Si). However, as not all orthorhombic silicide grains follow this epitax ial relationship, the minimum yield in the Rutherford backscattering spectr ometry (RBS) spectrum increases compared to the results after a low tempera ture annealing, (C) 2000 Elsevier Science B.V. All rights reserved.