Characterization of p-in-n ATLAS silicon microstrip detectors fabricated by Hamamatsu Photonics and irradiated with 24 GeV/c protons to 3 x 10(14) pcm(-2)

P-in-n silicon microstrip prototype detectors for the ATLAS experiment at C ERN have been designed and manufactured by Hamamatsu Photonics. Detectors w ere irradiated at the CERN Proton Synchrotron facility to a fluence of 3 x 10(14) pcm(-2) corresponding to the total fluence anticipated after tell ye ars of operation in the ATLAS semiconductor tracker. They were subsequently annealed for 7 days at 25 degrees C in order to reach the end of the benef icial annealing period and hence the minimum in depletion voltage. The char acteristics of 4 different detector designs have been evaluated. The pre-ir radiation behaviour of all detectors is consistent and well within the spec ifications for ATLAS detectors. Similarly, the post-irradiation and anneal performance for all detectors shows excellent behaviour. This is in terms o f both the leakage current characteristics and the signal and noise perform ance as determined from LHC speed readout electronics. The detector charact eristics are such that operation within the maximum operating voltage envis aged for ATLAS is possible.