Characterization of p-in-n ATLAS silicon microstrip detectors fabricated by Hamamatsu Photonics and irradiated with 24 GeV/c protons to 3 x 10(14) pcm(-2)
D. Morgan et al., Characterization of p-in-n ATLAS silicon microstrip detectors fabricated by Hamamatsu Photonics and irradiated with 24 GeV/c protons to 3 x 10(14) pcm(-2), NUOV CIM A, 112(11), 1999, pp. 1245-1251
Citations number
9
Categorie Soggetti
Physics
Journal title
NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA A-NUCLEI PARTICLES AND FIELDS
P-in-n silicon microstrip prototype detectors for the ATLAS experiment at C
ERN have been designed and manufactured by Hamamatsu Photonics. Detectors w
ere irradiated at the CERN Proton Synchrotron facility to a fluence of 3 x
10(14) pcm(-2) corresponding to the total fluence anticipated after tell ye
ars of operation in the ATLAS semiconductor tracker. They were subsequently
annealed for 7 days at 25 degrees C in order to reach the end of the benef
icial annealing period and hence the minimum in depletion voltage. The char
acteristics of 4 different detector designs have been evaluated. The pre-ir
radiation behaviour of all detectors is consistent and well within the spec
ifications for ATLAS detectors. Similarly, the post-irradiation and anneal
performance for all detectors shows excellent behaviour. This is in terms o
f both the leakage current characteristics and the signal and noise perform
ance as determined from LHC speed readout electronics. The detector charact
eristics are such that operation within the maximum operating voltage envis
aged for ATLAS is possible.