Highly segmented silicon detectors have already been used in high-energy ph
ysics experiments for a long time. But. in future experiments they will hav
e to survive for several years in harsh radiation environments. Their perfo
rmance will degenerate due to irradiation-induced bulk and surface damage.
Whereas bulk damage is design independent and has been successfully under i
nvestigation for a long time nom, the design-related surface damage and its
consequences for a highly segmented detector are not well known yet. There
fore, we have developed a test device and irradiated it systematically with
low-energy electrons. From I-V curves before and after irradiation we have
determined the influence of surface damage on the leakage current of singl
e-pixel cells. As a main result it was found that, depending on the design,
only a fraction of the surface area contributes to the interface generatio
n current after surface damage.