Magnetic properties of Co films on Cu/Si(110) and Cu(111)

The magnetic anisotropy of strained epitaxial Co films deposited on straine d Cu(lll) on Si(110) and miscut Cu(lll) are reported. First, a Cu(lll) buff er layer with an in-plane strain is formed by epitaxial growth on Si(110). Co films deposited on the buffer layer develop a uniaxial anisotropy axis o riginating from the strain along the twofold axis of the Si(110) surface. T he magnetic anisotropy of this film is compared to that of a Co film deposi ted on a miscut Cu(lll) single crystal with uniaxial step-induced anisotrop y in the Co layer. The measured hysteresis loops are compared to hysteresis loops simulated within a Stoner-Wolfarth model with a varying fraction of uniaxial and triaxial anisotropies. The measurements and the model are in q ualitative agreement and reveal uniaxial and triaxial anisotropies of the s ame order of magnitude for both systems.