Electronic transport in Eu1-xCaxB6

Citation
S. Paschen et al., Electronic transport in Eu1-xCaxB6, PHYS REV B, 61(6), 2000, pp. 4174-4180
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
10980121 → ACNP
Volume
61
Issue
6
Year of publication
2000
Pages
4174 - 4180
Database
ISI
SICI code
1098-0121(20000201)61:6<4174:ETIE>2.0.ZU;2-4
Abstract
We have measured the electrical resistivity, the magnetoresistance, the Hal l effect, and the magnetization in varying temperature ranges between 0.3 a nd 300 K on single crystals of EuB6, CaB6, and Eu0.8Ca0.2B6. The ferromagne tic phase transition of EuB6, marked by a sharp peak in the temperature dep endence of the electrical resistivity p(T) just below 16 K, is shown to be accompanied by a considerable increase of the effective charge carrier conc entration n(eff). The overall features of the transport properties of Eu0.8 Ca0.2B6 are similar to those of EuB6. A phase transition at 5.3 K has been established. However, the increase of n(eff) across this phase transition b y two orders of magnitude is much more pronounced than in pure EuB6.