Origin of two types of excitons in CdSe dots on ZnSe

Citation
S. Lee et al., Origin of two types of excitons in CdSe dots on ZnSe, PHYS REV B, 61(4), 2000, pp. R2405-R2408
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
10980121 → ACNP
Volume
61
Issue
4
Year of publication
2000
Pages
R2405 - R2408
Database
ISI
SICI code
1098-0121(20000115)61:4<R2405:OOTTOE>2.0.ZU;2-T
Abstract
Recent micro-FL and time-resolved PL data performed on CdSe dots embedded i n ZnSe show compelling evidence that the FL emission results from two diffe rent kinds of states. We propose a model explaining the origin of these dif ferent states coexisting within a single dot. The main concept of the model is that, while the ground state of the heavy hole is confined to strain-in duced potential pockets at the bottom of the island, the electrons and the first excited state in the valence band are distributed within the entire i sland. That difference in the degree of localization between the two heavy- hole band states is responsible for the different properties of PL transiti ons observed in our experiments.