Hydrogen-induced 3 x 1 phase of the Si-rich 3C-SiC(001) surface

A single-domain 3 x 1 phase induced by hydrogen adsorption on a Si-rich 3C- SiC(001)3 x 2 surface is investigated by photoemission using synchrotron ra diation. Three surface components of the Si 2p core level are identified fo r the 3 x 1-H phase, which resemble those of the 3 x 2 surface. A H-Si bond ing state is observed by angle-resolved valence-band photoemission. These r esults are consistent with the recent assignments of the Si 2p surface comp onents and the valence band spectra of the 3 x 2 surface, based on the 3 x 2 structure model with 2/3 ML Si addimers. A straightforward 3 x 1-H struct ure model is introduced featuring Si dimer-bond breaking and dangling-bond saturation.