Citation
Sf. Tsay et al., Structural properties of Ga clusters on Si(111), PHYS REV B, 61(4), 2000, pp. 2699-2702
Citations number
21
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
10980121
→ ACNP
Volume
61
Issue
4
Year of publication
2000
Pages
2699 - 2702
Database
ISI
SICI code
1098-0121(20000115)61:4<2699:SPOGCO>2.0.ZU;2-7
Abstract
Using the first-principles molecular-dynamics method in the energy-minimiza
tion application, we calculate the detailed geometry of Ga decamers on the
Si(lll) surface observed by scanning tunneling microscopy (STM). The calcul
ated relative heights of Ga adatoms agree reasonably well with STM data. Ou
r total-energy results support the Ga-Si honeycomblike triangular decamer m
odel proposed by Lai and Wang [Phys. Rev. B 60, 1764 (1999)] to explain the
Ga clusters observed in their STM measurements.