Charged excitons in a low magnetic field in GaAs/Ga1-xAlxAs and CdTe/Cd1-xZnxTe semiconductor quantum wells

Authors
Stebe, B Moradi, A
Citation
B. Stebe et A. Moradi, Charged excitons in a low magnetic field in GaAs/Ga1-xAlxAs and CdTe/Cd1-xZnxTe semiconductor quantum wells, PHYS REV B, 61(4), 2000, pp. 2888-2894
Citations number
37
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
10980121 → ACNP
Volume
61
Issue
4
Year of publication
2000
Pages
2888 - 2894
Database
ISI
SICI code
1098-0121(20000115)61:4<2888:CEIALM>2.0.ZU;2-5
Abstract
We study the influence of an external magnetic field on the singlet and tri plet ground states of negatively and positively charged excitons in GaAs/Ga 1-xAlxAs and CdTe/Cd1-xZnxTe semiconductor quantum wells in the low-field l imit. The energies are determined using a variational wave function for fin ite values of the band offsets. We show that there appear additional Landau levels due to the charge of the center of mass. We discuss the influence o f the magnetic field on the exciton and charged excitons transition energie s.