Effect of ultrasonic treatment on the mobility of short dislocations in Sicrystals

The effect of ultrasonic treatment on the mobility of short surface disloca tions in Si crystals is investigated. It is found that ultrasonic treatment of Si crystals changes the velocity of dislocations under a permanent mech anical load. The nature of variation of dislocation velocity is determined by the sign of external stresses acting on the sample: compressive forces d ecrease while tensile forces increase the velocity of dislocations. After u ltrasonic treatment of the samples, a decrease in the activation energy for dislocation motion and the enhancement of the electroplastic effect are ob served. A possible mechanism of the observed effects is considered. (C) 200 0 MAIK "Nauka/Interperiodica".