Investigation of barrier tunneling characteristics of symmetrical double quantum well in In0.25Ga0.75As/GaAs/In0.25Ga0.75As heterostructure

Authors
Orlov, LK Ivina, NL Romanov, YA Rubtsova, RA
Citation
Lk. Orlov et al., Investigation of barrier tunneling characteristics of symmetrical double quantum well in In0.25Ga0.75As/GaAs/In0.25Ga0.75As heterostructure, PHYS SOL ST, 42(3), 2000, pp. 548-553
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICS OF THE SOLID STATE
ISSN journal
10637834 → ACNP
Volume
42
Issue
3
Year of publication
2000
Pages
548 - 553
Database
ISI
SICI code
1063-7834(2000)42:3<548:IOBTCO>2.0.ZU;2-O
Abstract
The optical and electrophysical properties of the GaAs/In0.25Ga0.75As heter ostructure with a symmetric double quantum well have been investigated. The influence of tunneling electrons and holes through an internal barrier of the quantum well on the shift and splitting of the quantum levels is analyz ed. The theoretical estimates are compared with the results of the photolum inescence and photoconductivity measurements. The Hall measurements indicat e that the barrier strongly affects the mobility of charge carriers. (C) 20 00 MAIK "Nauka/Interperiodica".