A Mossbauer study of a two-electron acceptor impurity of zinc in silicon

Citation
Fs. Nasredinov et al., A Mossbauer study of a two-electron acceptor impurity of zinc in silicon, SEMICONDUCT, 34(3), 2000, pp. 269-271
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
34
Issue
3
Year of publication
2000
Pages
269 - 271
Database
ISI
SICI code
1063-7826(2000)34:3<269:AMSOAT>2.0.ZU;2-L
Abstract
Mossbauer emission spectroscopy of the Ga-67(Zn-67) isotope was used to sho w that the two-electron acceptor impurity of Zn is present in silicon only in the form of neutral (Zn-0) or doubly ionized (Zn2-) centers, depending o n the Fermi-level position. Broadening of the spectra corresponding to the above centers indicates that the local symmetry of these centers is not cub ic. The absence of the line corresponding to the singly ionized state (Zn2- ) of zinc in the Mossbauer spectra of partially compensated samples is rega rded as evidence that the correlation energy is negative. (C) 2000 MAIK "Na uka/Interperiodica".