Study of GaN :Omicron films and related heterostructures

GaN:O solid solution films with various content of oxygen were obtained by the vapor phase deposition method using pyrolytic decomposition of gallium monoammine chloride in the presence of water vapors on substrates of crysta lline quartz and silicon. Structure and optical properties of the films wer e studied to find that, as the oxygen content in the films increased, the e nergy gap at 300 K increased from 3.4 to 3.9 eV. Photoelectric properties o f Si/GaN:O heterojunctions were studied. In a temperature range of 80-290 K , all heterojunctions are photosensitive; the photoresponse and the spectra l characteristics depend on the oxygen content in the GaN:O film. The speci fic features of the "metallurgical" boundary of the heterojunction are disc ussed. (C) 2000 MAIK "Nauka/Interperiodica".