Mechanisms of InGaAlAs solid solution decomposition stimulated by InAs quantum dots

Authors
Tsatsul'nikov, AF Volovik, BV Bedarev, DA Zhukov, AE Kovsh, AR Ledentsov, NN Maksimov, MV Maleev, NA Musikhin, YG Ustinov, VM Bert, NA Kop'ev, PS Bimberg, D Alferov, ZI
Citation
Af. Tsatsul'Nikov et al., Mechanisms of InGaAlAs solid solution decomposition stimulated by InAs quantum dots, SEMICONDUCT, 34(3), 2000, pp. 323-326
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
34
Issue
3
Year of publication
2000
Pages
323 - 326
Database
ISI
SICI code
1063-7826(2000)34:3<323:MOISSD>2.0.ZU;2-B
Abstract
Mechanisms of InGaAlAs solid solution decomposition stimulated by a purpose ly deposited layer of InAs quantum dots are studied. Decomposition of the s olid solution results in an increase in the effective quantum dot size and the shift of the photoluminescence line to as far as 1.3 mu m. When aluminu m atoms are added to the solid solution, the effect of In atom "conservatio n" within the dots is observed, which also causes an increase in the effect ive dot size. (C) 2000 MAIK "Nauka/Interperiodica".