Mm. Mezdrogina et Av. Patsekin, Transformation of an unordered structural network in amorphous hydrogenated silicon films as a result of doping with boron, SEMICONDUCT, 34(3), 2000, pp. 348-352
The influence of the technological parameters of deposition, the purity and
relative concentration of diborane, and the substrate temperature on elect
rical parameters of (a-Si:H):B films obtained by high-frequency decompositi
on of a gaseous mixture in a multielectrode system was studied. Simultaneou
s existence of the mechanisms for doping and modification in the case of in
troduction of boron from diborane in the course of deposition of (a-Si:H):B
films is proposed. (C) 2000 MAIK "Nauka/Interperiodica".