Transformation of an unordered structural network in amorphous hydrogenated silicon films as a result of doping with boron

Authors
Mezdrogina, MM Patsekin, AV
Citation
Mm. Mezdrogina et Av. Patsekin, Transformation of an unordered structural network in amorphous hydrogenated silicon films as a result of doping with boron, SEMICONDUCT, 34(3), 2000, pp. 348-352
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
34
Issue
3
Year of publication
2000
Pages
348 - 352
Database
ISI
SICI code
1063-7826(2000)34:3<348:TOAUSN>2.0.ZU;2-2
Abstract
The influence of the technological parameters of deposition, the purity and relative concentration of diborane, and the substrate temperature on elect rical parameters of (a-Si:H):B films obtained by high-frequency decompositi on of a gaseous mixture in a multielectrode system was studied. Simultaneou s existence of the mechanisms for doping and modification in the case of in troduction of boron from diborane in the course of deposition of (a-Si:H):B films is proposed. (C) 2000 MAIK "Nauka/Interperiodica".