Absorption and photoconductivity of boron-compensated mu c-Si : H

A study is reported of absorption, conductivity, and photoconductivity of p hotosensitive mu c-Si:H weakly doped with boron. The dependences of photoco nductivity on the temperature and the intensity of light were measured in a temperature range of 100-400 K for photon energies of 0.9, 1.3, and 1.8 eV . The results obtained are explained by the dominant contribution of the mi crocrystalline phase and the states at the interfaces of microcrystals to t he transport and recombination of nonequilibrium carriers in mu c-Si:H. Pos sible recombination mechanisms and the change of their role with temperatur e are analyzed. (C) 2000 MAIK "Nauka/Interperiodica".