Materials theory based modeling of wide band gap semiconductors: from basic properties to devices

In this paper we present a general methodology, materials theory based mode ling, for predicting device performance in technologically immature materia ls that can proceed relatively independently of experiment. The models inco rporated within this general approach extend from a fundamental physics bas ed, microscopic analysis to macroscopic, engineering based device models. U sing this scheme, we have investigated the transport and breakdown properti es of several emerging wide band gap semiconductor materials, i.e. GaN, InN , 3C-SiC, and 4H-SIC. The carrier drift velocities, mobilities, and impact ionization coefficients for these materials can be predicted using the mate rials theory based modeling method. Using these results, device level simul ations can then be made. Here we report Monte Carlo and selfconsistent char ge control modeling of GaN based devices. Comparison to experimental measur ements is made when possible. Good agreement between the selfconsistent cha rge control model calculations and experiment is obtained. Some of the issu es pertinent to heterostructure bipolar transistor modeling of GaN are disc ussed. (C) 2000 Elsevier Science Ltd. All rights reserved.