GaN/SiC HBTs and related issues

This paper reviews recent progress in the field of GaN/SiC heterojunction b ipolar transistors. Key issues are identified and discussed. These include the comparison of a double-mesa and a selectively grown emitter structure, the evaluation of the GaN/SiC heterojunction and the problems faced when op erating the devices in a common-emitter mode. A circuit simulation is prese nted indicating that common-emitter operation can be obtained for devices w ith low leakage current and modest gain. (C) 2000 Published by Elsevier Sci ence Ltd. All rights reserved.