Demonstration of the first 4H-SiC avalanche photodiodes

Authors
Yan, F Zhao, JH Olsen, GH
Citation
F. Yan et al., Demonstration of the first 4H-SiC avalanche photodiodes, SOL ST ELEC, 44(2), 2000, pp. 341-346
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
44
Issue
2
Year of publication
2000
Pages
341 - 346
Database
ISI
SICI code
0038-1101(200002)44:2<341:DOTF4A>2.0.ZU;2-K
Abstract
4H-SiC visible-blind reach-through avalanche photodiodes (RAPDs) were desig ned and fabricated with mesa edge termination and thermal oxide passivation techniques. The devices show "hard" avalanche breakdown with a positive te mperature coefficient. The photo response spectra, measured at different bi ases, displayed a maximum responsivity of 106 A/W, and a corresponding opti cal gain of about 500. (C) 2000 Elsevier Science Ltd. Ail rights reserved.