OPTIMIZATION OF III V BINARY GROWTH WITH RHEED IN MOMBE/

Authors
UNGERMANNS C AHE MVD CARIUS R FORSTER A HOLLFELDER M HARDTDEGEN H MATT M NICOLL K SCHMIDT R SETZER B LUTH H
Citation
C. Ungermanns et al., OPTIMIZATION OF III V BINARY GROWTH WITH RHEED IN MOMBE/, Fresenius' journal of analytical chemistry, 358(1-2), 1997, pp. 101-104
Citations number
9
Categorie Soggetti
Chemistry Analytical
Journal title
Fresenius' journal of analytical chemistry → ACNP
ISSN journal
09370633
Volume
358
Issue
1-2
Year of publication
1997
Pages
101 - 104
Database
ISI
SICI code
0937-0633(1997)358:1-2<101:OOIVBG>2.0.ZU;2-5
Abstract
In this paper we report on the optimization of homoepitaxial InAs and InP growth in MOMBE (metalorganic molecular beam epitaxy). A correlati on is made between good optical quality material and the observation o f RHEED (reflection high energy electron diffraction) intensity oscill ations. It will be shown, that in situ RHEED oscillations can be used to determine a growth parameter window in MOMBE.