Field ion and scanning tunnel microscopy studies of surface and bulk defects in carbon and silicon

Authors
Suvorov, AL Cheblukov, YN Lazarev, NE Bobkov, AF Popov, MO Babaev, VP
Citation
Al. Suvorov et al., Field ion and scanning tunnel microscopy studies of surface and bulk defects in carbon and silicon, TECH PHYS, 45(3), 2000, pp. 343-348
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
TECHNICAL PHYSICS
ISSN journal
10637842 → ACNP
Volume
45
Issue
3
Year of publication
2000
Pages
343 - 348
Database
ISI
SICI code
1063-7842(2000)45:3<343:FIASTM>2.0.ZU;2-4
Abstract
Complex study of surface and bulk defects was performed by field ion and sc anning tunnel microscopy. Specimens were irradiated by 20- to 50-keV He+, A r+, and Bi+ ions at room temperature. The irradiation fluences were between 10(18) and 10(20) ion m(-2). Calculated parameters of depletion zones and atomic displacement cascades were compared with theoretical estimates. It w as shown that controlled ion bombardment of material surface is an effectiv e tool for fabricating field-emission cathodes for vacuum microelectronics. (C) 2000 MAIK "Nauka/Interperiodica".