Effect of ultraviolet irradiation on the charge state of ion-implanted silicon-silicon dioxide structures

The effect of irradiation with the light from a near-ultraviolet range (NUV irradiation) on the charge state of Si-SiO2 structures with an argon-impla nted silicon dioxide layer was studied. The method of depth profiling based on the measurement of high-frequency capacitance-voltage characteristics o f an electrolyte-dielectric-semiconductor system in combination with etchin g of the dielectric layer was used. It was established that the NUV irradia tion resulted in the recharge of positively charged amphoteric centers (for med due to ion implantation in the silicon dioxide layer of the Si-SiO2 str uctures) into negatively charged ones. (C) 2000 MAIK "Nauka/Interperiodica" .