COMBINED USE OF LATTICE SOURCE INTERFERENCES AND DIVERGENT BEAM X-RAYINTERFERENCES TO INVESTIGATE THE MICROSTRUCTURE OF ION-BOMBARDED CU-SN-DIFFUSION ZONES
S. Dabritz et al., COMBINED USE OF LATTICE SOURCE INTERFERENCES AND DIVERGENT BEAM X-RAYINTERFERENCES TO INVESTIGATE THE MICROSTRUCTURE OF ION-BOMBARDED CU-SN-DIFFUSION ZONES, Fresenius' journal of analytical chemistry, 358(1-2), 1997, pp. 148-153
Diffusion processes and phase formations as well as the crystallograph
ic structure of microelectronic contact zones decisively influence the
electrical and mechanical properties of electronic components. Using
various physical methods in the same analysis area, such as lattice so
urce Interferences and divergent beam X-ray interferences, optical mic
roscopy and SEM, electron probe microanalysis and the ion beam slope c
utting method, profound statements about the microstructure can be mad
e. A Kossel camera and an additional divergent beam X-ray device were
built and installed in a Scanning Electron Microscope (SEM) CamScan CS
44. X-ray interferences in the microrange of selected areas were take
n using both systems, providing information on the crystallographic or
ientation and the real structure of the specimens. The interference te
chniques were tested using single-crystal and ion-bombarded polycrysta
lline copper. in addition, applying the mentioned methods, the diffusi
on generated intermetallic compounds Cu3Sn, Cu6Sn5 and Cu41Sn11 were i
nvestigated using ion-bombarded Cu-Sn/Pb model samples.