COMBINED USE OF LATTICE SOURCE INTERFERENCES AND DIVERGENT BEAM X-RAYINTERFERENCES TO INVESTIGATE THE MICROSTRUCTURE OF ION-BOMBARDED CU-SN-DIFFUSION ZONES

Diffusion processes and phase formations as well as the crystallograph ic structure of microelectronic contact zones decisively influence the electrical and mechanical properties of electronic components. Using various physical methods in the same analysis area, such as lattice so urce Interferences and divergent beam X-ray interferences, optical mic roscopy and SEM, electron probe microanalysis and the ion beam slope c utting method, profound statements about the microstructure can be mad e. A Kossel camera and an additional divergent beam X-ray device were built and installed in a Scanning Electron Microscope (SEM) CamScan CS 44. X-ray interferences in the microrange of selected areas were take n using both systems, providing information on the crystallographic or ientation and the real structure of the specimens. The interference te chniques were tested using single-crystal and ion-bombarded polycrysta lline copper. in addition, applying the mentioned methods, the diffusi on generated intermetallic compounds Cu3Sn, Cu6Sn5 and Cu41Sn11 were i nvestigated using ion-bombarded Cu-Sn/Pb model samples.