Citation
Lj. Kim et al., Effects of deposition parameters on the crystallinity of CeO2 thin films deposited on Si(100) substrates by r.f-magnetron sputtering, THIN SOL FI, 360(1-2), 2000, pp. 154-158
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090
→ ACNP
Volume
360
Issue
1-2
Year of publication
2000
Pages
154 - 158
Database
ISI
SICI code
0040-6090(20000201)360:1-2<154:EODPOT>2.0.ZU;2-1
Abstract
Deposition temperature, r.f.-power and seed layer deposition time were impo
rtant parameters effecting the crystallinity of CeO2 thin films deposited b
y r.f.-magnetron sputtering on Si(100) substrates. The CeO2 (200) peak was
notable for a deposition temperature above 600 degrees C. With decreased r.
f.-power and thus lower deposition rate, the intensity of the CeO2(200) pea
k increased. When the seed layer deposition time was less than 20 s, the Ce
O2(200) peak dominated. Transmission electron microscopy (TEM) diffraction
revealed that the deposited CeO2 thin film had a polycrystalline structure.
Annealing at 950 degrees C in O-2 atmosphere for 30 min increased and shar
pened the CeO2(200) peak. (C) 2000 Elsevier Science S.A. All rights reserve
d.