The gas sensitivity of a metal-insulator-semiconductor field-effect-transistor based on Langmuir-Blodgett films of a new asymmetrically substituted phthalocyanine

Authors
Hu, WP Liu, YQ Xu, Y Liu, SG Zhou, SQ Zhu, DB Xu, B Bai, CL Wang, C
Citation
Wp. Hu et al., The gas sensitivity of a metal-insulator-semiconductor field-effect-transistor based on Langmuir-Blodgett films of a new asymmetrically substituted phthalocyanine, THIN SOL FI, 360(1-2), 2000, pp. 256-260
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
360
Issue
1-2
Year of publication
2000
Pages
256 - 260
Database
ISI
SICI code
0040-6090(20000201)360:1-2<256:TGSOAM>2.0.ZU;2-U
Abstract
Langmuir-Blodgett (LB) films of an amino-tri-tert-butyl-phthalocyanine (AmB uPc) were fabricated as the semiconductor thin layer for a metal-insulator- semiconductor field-effect-transistor (MISFET). The gas sensitivity of the low-conducting LB films MISFET was measured in a NO2 atmosphere at differen t concentration. The results showed that the gas concentration and the drai n-source current of the AmBuPc sensor satisfy Langmuir adsorption isotherm. (C) 2000 Elsevier Science S.A. All rights reserved.