PREPARATION OF CUPRITE (CU2O), PARAMELACONITE (CU3(2- CHARACTERIZATION BY EPMA, XRD, HEED AND SEM()CU2(1+)O4) AND TENORITE (CUO) WITH MAGNETRON SPUTTERING ION PLATING )

Cu-O layers were deposited on Si-<100> wafers at 90 degrees C by means of reactive magnetron sputtering ion plating (R-MSIP). A Cu-target wa s sputtered in rf-mode by an oxygen/argon plasma, and the influence of the oxygen partial pressure on composition, structure. texture and mo rphology of the Cu-O layers was investigated. The analysis with EPMA, XRD, HEED and SEM yielded the following results: with an appropriate s etting of the oxygen partial pressure. the oxygen content of the films could be controlled between 0 and 50 at-%. XRD bulk structure analysi s shows changes in the crystal structure of the films with increasing oxygen content from the fcc structure of Cu, followed by the sc struct ure of Cu2O (cuprite), the tetragonal structure of Cu32+Cu21+O4 (param elaconite) to the monoclinic structure of CuO (tenorite). As revealed by HEED, the structure of the near-surface region of the latter two is the same as that of the bulk, whereas in the case of the films with f ee bulk structure, due to oxidation by air, the surface has these stru cture of Cu2O, and in the case of the film with the sc structure, a mo noclinic surface structure of CuO is observed. SEM analyses detected a disordered columnar growth of all Cu-O films.