THE OPTICAL CHARACTERIZATION OF BORON-DOPED MPCVD DIAMOND FILMS

Photoluminescence and infrared absorption studies were performed on bo ron doped diamond films deposited on a synthetic nitrogen-doped diamon d substrate. Based on the infrared absorption spectra, oxygen related defects and boron-nitrogen complexes formed during growth procedure we re identified. In the photoluminescence experiment two new emission ba nds peaking at 693 and 602 nm were found. The narrow 602 nm band was a ttributed to the boron aggregates. The broad 693 nm band was assigned to the nitrogen centers disturbed by the presence of boron atoms. The interdiffusion of boron and nitrogen atoms is discussed. (C) 1997 Else vier Science S.A.