OPTICAL AND ELECTRICAL CHARACTERISTICS OF AMORPHOUS DIAMOND FILMS

Citation
Ax. Wei et al., OPTICAL AND ELECTRICAL CHARACTERISTICS OF AMORPHOUS DIAMOND FILMS, DIAMOND AND RELATED MATERIALS, 6(8), 1997, pp. 983-986
Citations number
10
Categorie Soggetti
Material Science
ISSN journal
09259635
Volume
6
Issue
8
Year of publication
1997
Pages
983 - 986
Database
ISI
SICI code
0925-9635(1997)6:8<983:OAECOA>2.0.ZU;2-7
Abstract
Amorphous diamond (a-D) films have been formed by magnetic field filte red carbon ion deposition. The optical and electrical characteristics of these films as a function of the substrate bias voltage V-h have be en studied using optical absorption spectroscopy and electrical measur ements. The results show that a-D films with high sp(3) fractions were formed when the substrate bias voltage V-b was in the range -10 V to -50 V. The optical band gap of such a-D films was found to be larger t han 3 eV. It is shown that optical absorption spectroscopy is a simple method to compare qualitatively the sp(3) fractions in carbon films. The mechanisms of transport in these films are also studied and discus sed. (C) 1997 Elsevier Science S.A.