Effects of temperature and r.f. power sputtering on electrical and opticalproperties of SnO2

Citation
S. Hamzaoui et M. Adnane, Effects of temperature and r.f. power sputtering on electrical and opticalproperties of SnO2, APPL ENERG, 65(1-4), 2000, pp. 19-28
Citations number
8
Categorie Soggetti
Environmental Engineering & Energy
Journal title
APPLIED ENERGY
ISSN journal
03062619 → ACNP
Volume
65
Issue
1-4
Year of publication
2000
Pages
19 - 28
Database
ISI
SICI code
0306-2619(200001/04)65:1-4<19:EOTARP>2.0.ZU;2-6
Abstract
Electrical and optical properties of SnO2, which is a photovoltaic material for solar energy conversion to electricity, have been investigated. Semi-c onducting SnO2 has been grown by r.f. sputtering. We report the influence o f process variables, such as substrate temperature and r.f. power. The film resistivity decreases with increasing temperature, but rises with increasi ng r.f. power: these can be related to crystallite size and the film orient ation respectively. From the optical measurements, we deduce a variation of band-gap energy with substrate temperature. We show that the substrate tem perature has a subsequent influence on the electrical and optical propertie s of this material. (C) 1999 Elsevier Science Ltd. All rights reserved.