A comparison of ns and ps steam laser cleaning of Si surfaces

Citation
M. Mosbacher et al., A comparison of ns and ps steam laser cleaning of Si surfaces, APPL PHYS A, 69, 1999, pp. S331-S334
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
ISSN journal
09478396 → ACNP
Volume
69
Year of publication
1999
Supplement
S
Pages
S331 - S334
Database
ISI
SICI code
0947-8396(199912)69:<S331:ACONAP>2.0.ZU;2-D
Abstract
We report a quantitative investigation on the efficiency of the steam laser cleaning process using ns and ps pulses. Well-characterized polymer partic les with a diameter of 800 nm dispersed on commercial Si wafers were chosen as a modeling contaminant system. As a result of our investigation, we sho w for the first time the feasibility of performing efficient steam laser cl eaning with ps laser pulses and compare the achieved efficiency with the on e obtained for ns pulses. For ns pulses, we found a cleaning fluence thresh old of 50 mJ/cm(2) that is independent of the pulse durations (2.5 ns and 8 ns) and the wavelengths (532 nm and 583 nm) used. The application of ps pu lses (FWHM = 30ps, lambda = 583 nm) lowered this threshold to 20mJ/cm(2). B oth cleaning thresholds are far below the melting thresholds for these lase r parameters. Cleaning efficiencies > 90% were reached for both pulse durat ions.