Cleaning of submicrometer structures on Si-masters with pulsed excimer laser and reactive ion etching

Citation
A. Braun et al., Cleaning of submicrometer structures on Si-masters with pulsed excimer laser and reactive ion etching, APPL PHYS A, 69, 1999, pp. S339-S342
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
ISSN journal
09478396 → ACNP
Volume
69
Year of publication
1999
Supplement
S
Pages
S339 - S342
Database
ISI
SICI code
0947-8396(199912)69:<S339:COSSOS>2.0.ZU;2-#
Abstract
The replication of submicrometer-sized structures is accomplished utilizing replica molding of a UV-cured acrylate blend. Atomic force microscopy (AFM ), optical, and scanning electron microscope images reveal acrylate residue s on the Si-master after replication. The differences between excimer laser and reactive ion cleaning of the Si-masters in terms of their effectivenes s and reliability is discussed. Forty to sixty KrF laser pulses at 400 mJ/c m(2) are suitable for removing acrylate residues from the Si-masters, while the oxygen plasma etching removes acrylate residues only to a limited degr ee because of a silicon diacrylate constituent in the acrylate blend.