Laser-induced molecular beam epitaxy of group-III nitrides

We report on the heteroepitaxial growth of group-III nitrides by laser-indu ced molecular beam epitaxy (LIMBE). The requirements for the formation of h igh-quality, monocrystalline layers are much stronger than those for polycr ystalline films. We have modified and improved the conventional pulsed lase r deposition. In our process, we use metallic targets in a nitrogen environ ment instead of ceramic or pressed powder nitrides and we employ picosecond laser pulses with high energy (> 1 mJ) and high repetition rate (2 kHz). W e have grown GaN, AlN, InN, InGaN and Mg doped GaN on sapphire (0001).