Chalcogenide-based thin film sensors prepared by pulsed laser deposition technique

One advantage of the pulsed laser deposition (PLD) method is the stoichiome tric transfer of multicomponent target material to a given substrate. This advantage of the PLD determined the choice to prepare chalcogenide-based th in films with an off-axis geometry PLD. Ag-As-S and Cu-Ag-As-Se-Te targets were used to deposit thin films on Si substrates for an application as a he avy metal sensing device. The films were characterized by means of Rutherfo rd backscattering spectrometry (RBS), transmission electron microscopy (TEM ), and electrochemical measurements. The same stoichiometry of the films an d the targets was confirmed by RBS measurements. We observed a good long-te rm stability of more than 60 days and a nearly Nernstian sensitivity toward s Pb and Cu, which is comparable to bulk sensors.