Transparent conducting AZO and ITO films produced by pulsed laser ablationat 355 nm

Citation
B. Thestrup et J. Schou, Transparent conducting AZO and ITO films produced by pulsed laser ablationat 355 nm, APPL PHYS A, 69, 1999, pp. S807-S810
Citations number
21
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
ISSN journal
09478396 → ACNP
Volume
69
Year of publication
1999
Supplement
S
Pages
S807 - S810
Database
ISI
SICI code
0947-8396(199912)69:<S807:TCAAIF>2.0.ZU;2-U
Abstract
Thin films of aluminium-doped zinc oxide (AZO) and indium tin oxide (ITO) w ere deposited on glass substrates by laser ablation in an oxygen environmen t. The electrical and optical properties of films grown at various oxygen p ressures were compared. With no substrate heating, highly transparent and c onducting films were obtained with oxygen pressures between 15 and 23 mTorr for both materials. We obtained a specific resistivity of 1.8 x 10(-3) Ome ga cm for AZO and 1.1 x 10(-3) Omega cm for ITO. By heating the substrate t o 160 degrees C or 200 degrees C, the resistivity was further reduced to 1. 1 x 10(-3) Omega cm for AZO and 3.9 x 10(-4) Omega cm for ITO. The average transmission of visible light (450-750 MI) was between 82% and 98% in most cases. The results suggest that AZO is a promising alternative to ITO.