Synthesis and characterization of laser ablated TiNi films

TiNi thin films with BaTiO3 and PbZr0.52Ti0.48O3 (PZT) as buffer layers wer e deposited on Si(100) substrates by the pulsed laser deposition (PLD) meth od. Buffer layers (BaTiO3 and PZT) were deposited at 600 degrees C in oxyge n (O-2) environment and TiNi films were deposited on the top of the buffer layer in presence of 15 mTorr nitrogen (N-2) at various deposition temperat ures (50, 300, and 500 degrees C). Synthesis and characterization of TiNi f ilms were investigated from the crystallographic point of view by using X-r ay diffractometer (XRD) and atomic force microscope (AFM) techniques. It is found that buffer layer of BaTiO3 and PZT have improved the crystallinity of TiNi films deposited at higher temperatures. The TiNi/PZT film was unifo rm compared to TiNi/BaTiO3 film with the exception of agglomerates that app eared throughout the layer.