L. Escobar-alarcon et al., Structural and optical properties of Bi12SiO20 thin films obtained by pulsed laser deposition, APPL PHYS A, 69, 1999, pp. S949-S952
In this work, the synthesis of Bi12SiO20 thin films by pulsed laser deposit
ion on silicon substrates is reported. The structure of the films has been
investigated by Raman spectroscopy and X-ray diffraction. The thicknesses a
nd complex refractive index have been determined by reflectivity measuremen
ts performed in situ during the growth process. The surface morphology was
investigated by scanning electron microscopy. Highly oriented crystalline t
hin films were grown for substrate temperatures of 600 degrees C. The therm
al annealing at 700 degrees C of the amorphous films deposited at substrate
temperatures of 100-300 degrees C led to the formation of the eulytite cry
stalline phase (Bi-4(SiO4)(3)), whose Raman peaks are also reported.