Structural and optical properties of Bi12SiO20 thin films obtained by pulsed laser deposition

Citation
L. Escobar-alarcon et al., Structural and optical properties of Bi12SiO20 thin films obtained by pulsed laser deposition, APPL PHYS A, 69, 1999, pp. S949-S952
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
ISSN journal
09478396 → ACNP
Volume
69
Year of publication
1999
Supplement
S
Pages
S949 - S952
Database
ISI
SICI code
0947-8396(199912)69:<S949:SAOPOB>2.0.ZU;2-6
Abstract
In this work, the synthesis of Bi12SiO20 thin films by pulsed laser deposit ion on silicon substrates is reported. The structure of the films has been investigated by Raman spectroscopy and X-ray diffraction. The thicknesses a nd complex refractive index have been determined by reflectivity measuremen ts performed in situ during the growth process. The surface morphology was investigated by scanning electron microscopy. Highly oriented crystalline t hin films were grown for substrate temperatures of 600 degrees C. The therm al annealing at 700 degrees C of the amorphous films deposited at substrate temperatures of 100-300 degrees C led to the formation of the eulytite cry stalline phase (Bi-4(SiO4)(3)), whose Raman peaks are also reported.