Direct wafer bonding and transfer of 10-mu m-thick magnetic garnet films onto semiconductor surfaces

Bonding between liquid-phase-epitaxy-grown yttrium iron garnet films and va rious semiconductors is realized by direct wafer bonding. The semiconductor substrates can serve as a platform for integration or as a "handle" platfo rm for the transfer of mesoscopic garnet films. To effect film transfer, a sacrificial layer is formed in the garnet by deep ion implantation prior to bonding. Shear stress at the garnet/semiconductor interface can be control led by temperature tuning during the bonding process. A debonding temperatu re threshold of similar to 400 degrees C is found and related to the interf acial thermal stress due to difference in thermal expansion coefficients of the bonded materials. Film separation is realized by the application of th ermally induced stress at the sacrificial layer. (C) 2000 American Institut e of Physics. [S0003-6951(00)01510-2].