Transplanted Si films on arbitrary substrates using GaN underlayers

We demonstrate that Si layers overgrown on GaN/sapphire substrate structure s can be transferred onto host substrates by using the technique of laser-i nduced metallization of GaN at the GaN/sapphire interface via the reaction GaN = Ga + 1/2N(2). This may allow the grafting of films of Si onto substra tes such as glass or plastic for microelectronic applications. We examine t he debonding mechanism and propose that it occurs due to pressures of the o rder of a few thousand atmospheres generated with the release of nitrogen f rom the GaN metallization reaction. (C) 2000 American Institute of Physics. [S0003-6951(00)02110-0].