We report that the incorporation of N in GaNxP1-x alloys (x greater than or
equal to 0.43%) leads to a direct band-gap behavior of GaNP. For N concent
ration lower than 0.43%, a series of sharp emission lines from the various
N pair centers are observed for GaNP bulk layers. With increasing N concent
ration higher than 0.43%, a strong photoluminescence (PL) emission from GaN
P bulk layers is observed at room temperature. While the PL peak redshifts
with increasing N concentration to 3.1%, the PL intensity remains as intens
e. Absorption measurements show a direct band-gap behavior of GaNP alloys.
(C) 2000 American Institute of Physics. [S0003-6951(00)03510-5].