Effects of nitrogen on the band structure of GaNxP1-x alloys

Citation
Hp. Xin et al., Effects of nitrogen on the band structure of GaNxP1-x alloys, APPL PHYS L, 76(10), 2000, pp. 1267-1269
Citations number
20
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
76
Issue
10
Year of publication
2000
Pages
1267 - 1269
Database
ISI
SICI code
0003-6951(20000306)76:10<1267:EONOTB>2.0.ZU;2-E
Abstract
We report that the incorporation of N in GaNxP1-x alloys (x greater than or equal to 0.43%) leads to a direct band-gap behavior of GaNP. For N concent ration lower than 0.43%, a series of sharp emission lines from the various N pair centers are observed for GaNP bulk layers. With increasing N concent ration higher than 0.43%, a strong photoluminescence (PL) emission from GaN P bulk layers is observed at room temperature. While the PL peak redshifts with increasing N concentration to 3.1%, the PL intensity remains as intens e. Absorption measurements show a direct band-gap behavior of GaNP alloys. (C) 2000 American Institute of Physics. [S0003-6951(00)03510-5].