Determination of pore-size distribution in low-dielectric thin films

Citation
Dw. Gidley et al., Determination of pore-size distribution in low-dielectric thin films, APPL PHYS L, 76(10), 2000, pp. 1282-1284
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
76
Issue
10
Year of publication
2000
Pages
1282 - 1284
Database
ISI
SICI code
0003-6951(20000306)76:10<1282:DOPDIL>2.0.ZU;2-Q
Abstract
Positronium annihilation lifetime spectroscopy is used to determine the por e-size distribution in low-dielectric thin films of mesoporous methylsilses quioxane. A physical model of positronium trapping and annihilating in isol ated pores is presented. The systematic dependence of the deduced pore-size distribution on pore shape/dimensionality and sample temperature is predic ted using a simple quantum mechanical calculation of positronium annihilati on in a rectangular pore. A comparison with an electron microscope image is presented. (C) 2000 American Institute of Physics. [S0003-6951(00)03810-9] .