Influence of annealing on carrier dynamics in As ion-implanted epitaxiallylifted-off GaAs layers

Electrical and dynamical optical characterization of As-ion implanted and a nnealed GaAs has been performed. Changes of physical properties induced by annealing have been studied in detail by using layers annealed in small ste ps in the temperature range 500-700 degrees C. The carrier trapping rate in creases exponentially with increase of inverse annealing temperature indica ting that in ion-implanted GaAs ultrafast carrier capture occurs to the sam e trapping centers as in low-temperature-grown GaAs. Relatively large resis tivity and electron mobility in As-implanted GaAs have been observed after annealing, which shows that this material possesses properties required for a variety of ultrafast optoelectronic applications. (C) 2000 American Inst itute of Physics. [S0003-6951(00)02410-4].