Electron transport in the AlGaAs/InGaAs double-heterostructure pseudomorphic high-electron-mobility transistor

Variable magnetic-field Hall measurement has been used to investigate the t ransport properties in the double-heterostructure pseudomorphic high-electr on-mobility transistor in the temperature range from 1.6 to 240 K. The expe rimental data have been analyzed by using a hybrid approach consisting of t he mobility spectrum (MS) technique followed by a multicarrier fitting (MCF ) procedure. Both the Shubnikov-de Haas measurements and the hybrid MS + MC F approach agree well with the theoretical calculations. The resulting temp erature dependence of mobility and concentration for ground subbands and ex cited subbands shows that the excited subbands play an important role in th e observed transport behavior. (C) 2000 American Institute of Physics. [S00 03-6951(00)04406-5].