Dynamic study and experimental "two-step process" of substrate step preparation for high-T-c Josephson junctions

Citation
Hy. Zhai et al., Dynamic study and experimental "two-step process" of substrate step preparation for high-T-c Josephson junctions, APPL PHYS L, 76(10), 2000, pp. 1312-1314
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
76
Issue
10
Year of publication
2000
Pages
1312 - 1314
Database
ISI
SICI code
0003-6951(20000306)76:10<1312:DSAE"P>2.0.ZU;2-F
Abstract
We report theoretical and experimental studies of the dynamics of substrate step preparation for high-T-c Josephson junctions. A maximum step edge ang le of 70.8 degrees has been calculated for SrTiO3 (STO) substrates with a N b mask. This calculated angle agrees well with our experimental result of 6 6 degrees. Step-edge angles can be predicted for different purposes using t his method. We also utilized a "two-step process" to improve the surface mo rphology of the stepped substrate, and step-edge Josephson junctions were f abricated with good uniformity. (C) 2000 American Institute of Physics. [S0 003-6951(00)04010-9].