L. Malacky et al., PROPERTIES OF SILICON PULSE-DOPED INGAP LAYERS GROWN BY LP-MOCVD, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 33-36
Silicon doped In0.49Ga0.51P layers were grown at 560 degrees C and 50
mbar by low pressure metal organic chemical vapour deposition (LP-MOCV
D). A delta-doping technique was used for the doping of the InGaP laye
rs. The sheet carrier concentration increases linearly with the silane
mole fraction in the feed gas. The highest value of the sheet concent
ration obtained was 5.9 x 10(12)cm(-2), which corresponds to a 3D-conc
entration of 1.5 x 10(19) cm(-3). The width of doping profiles ranges
between 3 and 6 nm, indicating low diffusion of silicon in the InGaP.
The Hall electron mobility at 300 K was only slightly dependent on the
doping level, and it was between 680 and 480 cm(2) V-1 s(-1). The low
electron mobility is due to a high concentration of native background
accepters originating from growth gases. A strong band-acceptor (e-A(
0)) transition, appearing in the photoluminescence (PL) spectra, confi
rms the presence of accepters at a high density. (C) 1997 Elsevier Sci
ence S.A.