EBIC MODE CHARACTERIZATION OF TRANSPORT-PROPERTIES ON LASER HETEROSTRUCTURES

A method for the quantitative evaluation of electron-beam-induced curr ent (EBIC) profiles across p-n junctions (normal-collector configurati on) is presented. The procedure consists of firstly estimating the ext ent of electron-hole (e-h) pair generation by Monte Carlo calculations . Secondly, the steady-state diffusion equation is applied to minority carriers in each differential volume to evaluate the minority carrier collection probability. The model is then used to investigate (lambda = 1.3 mu m) InGaAsP/InP double bulk heterostructure lasers. From the comparison of experimental and calculated linescans, the minority carr ier diffusion length and surface recombination velocity are evaluated to be L = 0.52 mu m and SID = 1 x 10(5) cm(-1) at n-side and L = 0.87 mu m and SID = 5 x 10(4) cm(-1) at p-side. (C) 1997 Elsevier Science S .A.