METROLOGICAL, ELECTRICAL AND THERMAL-ANALYSIS OF SEMICONDUCTOR STRUCTURES USING SCANNING FORCE MICROSCOPY

Authors
MULLERZULOW B MAYWALD M CRAMER RM SPRENGEPIEL J GEHRING S
Citation
B. Mullerzulow et al., METROLOGICAL, ELECTRICAL AND THERMAL-ANALYSIS OF SEMICONDUCTOR STRUCTURES USING SCANNING FORCE MICROSCOPY, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 74-77
Citations number
5
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
44
Issue
1-3
Year of publication
1997
Pages
74 - 77
Database
ISI
SICI code
0921-5107(1997)44:1-3<74:MEATOS>2.0.ZU;2-L
Abstract
New modes of scanning force microscopy as related to semiconductor res earch are introduced. These cover quantitative three dimensional metro logy, local determination of sample voltages and the evaluation of ele ctrical and thermal features. All of these modes can be operated with nanometer resolution in principle and allow a comprehensive analysis o f the material or device under test without the need for extensive sam ple preparation. (C) 1997 Elsevier Science S.A.