Md. Rouhani et al., MONTE-CARLO SIMULATION OF THE EFFECT OF INTERSTITIAL ATOMS INTERACTION ON THE HETEROEPITAXIAL GROWTH OF COMPOUND SEMICONDUCTORS, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 82-86
We have investigated the kinetics of heteroepitaxial growth with large
lattice mismatch by associating the Monte Carlo technique with an ene
rgy model based on valence force field (VFF) approximation. The energy
model allows the acceleration of the atomic motions as a function of
local strain energy and a relaxation of most stressed positions. We ha
ve observed the roughening of the surface followed by the formation of
(lll) facets, the apparition of highly mobile atoms in interstitial po
sitions on these facets and the reaction between these atoms. The reac
tions are seen to lead to stabilized nuclei with dangling bonds which
are at the origin of point defects or extended defects in the growing
layer. (C) 1997 Elsevier Science S.A.