STRUCTURAL STUDY OF ALGAAS INGAAS SUPERLATTICES GROWN BY MBE ON (III)B GAAS SUBSTRATES/

AlGaAs/InGaAs strained layers superlattices (SLS) have been grown by m olecular beam epitaxy on (111)B and (100) GaAs substrates at different temperatures (520, 540 and 560 degrees C). The heterostructures are s tudied by transmission electron microscopy, scanning electron microsco py and low-temperature photoluminescence. The controversy concerning t he growth temperature for In-based/Al-based III-V alloys on (111)B GaA s is discussed. In this context, the (111)B and their corresponding (1 00) structures are compared. The best growth temperature is 560 degree s C, as a smooth surface and the lowest defect (dislocations, planar d efects and stacking faults tetrahedra) density is obtained at this tem perature. (C) 1997 Elsevier Science S.A.