Evk. Rao et al., EVALUATION OF THE PROPERTIES OF HYDROGENATED INP INGAASP DOUBLE-HETEROSTRUCTURE WAVE-GUIDES/, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 117-120
The potentiality of H passivation in InP-based photonic device technol
ogy was investigated by evaluating the properties of hydrogenated InP
(Zn)/InGaAsP double heterostructure (DHS) waveguide (WG) samples. Subs
equent to plasma exposure, conventional photoluminescence (PL) measure
ments were employed to monitor the optical quality, and Fabry-Perot da
mping oscillation measurements at similar to 1.55 mu m to evaluate the
propagation losses. We report here that hydrogenation significantly i
mproves the optical quality of DHS samples and further brings about an
efficient (90%) neutralization of Zn accepters in the upper p-InP con
finement layer, and to a lesser extent, also of those that are involun
tarily introduced into the nominally undoped InGaAsP quaternary (Q) gu
iding layer. These two features are shown to be profitable in photon d
evice technology as they can be engineered to reduce propagation losse
s (due to free-carrier absorption) in the DHS buried WG structures. (C
) 1997 Elsevier Science S.A.