DEFECT CHARACTERIZATION IN INP SUBSTRATES IMPLANTED WITH 2 MEV FE IONS

The defect structure in InP, either undoped or n-type, implanted with 2 MeV Fe ions to a dose of either 5 x 10(13) or 2 x 10(14) at cm(-2) a nd subsequently annealed at the maximum temperature of 750 degrees C h as been studied by TEM. The defect structure is very similar for both types of substrate. For the low dose case the as-implanted sample is o nly partially amorphised and after annealing the primary damage layer is replaced by a band of extrinsic dislocation loops and intrinsic sta cking fault tetrahedra. At high implantation dose the as-implanted lay er is amorphous and upon annealing only an imperfect solid phase epita xial regrowth is achieved as a heavily twinned band remains. Below thi s band extrinsic end of range dislocation loops were detected. The ori gin of these defects is discussed. (C) 1997 Elsevier Science S.A.